High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
High Switching Speed
High Reliability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulators
DC-DC converter
Solid state relay
Genera
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isc Silicon NPN Power Transistor
2SC2769
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VCEO(SUS) Collector-Emitter Voltage
200
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERIST
2SC2769 Datasheet
