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2SC2788 - NPN Transistor

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Description

Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications ABSOLUTE MAX

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Datasheet Details

Part number 2SC2788
Manufacturer INCHANGE
File Size 195.51 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2788 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Pulse 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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