Datasheet Details
| Part number | 2SC2809 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2809-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2809.
| Part number | 2SC2809 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2809-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2809 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2809 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2815 | NPN Transistor |
| 2SC2816 | NPN Transistor |
| 2SC2827 | NPN Transistor |
| 2SC2830 | NPN Transistor |
| 2SC2831 | NPN Transistor |
| 2SC2832 | NPN Transistor |
| 2SC2833 | NPN Transistor |
| 2SC2834 | NPN Transistor |
| 2SC2837 | NPN Transistor |
| 2SC2838 | NPN Transistor |