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2SC2827 Datasheet PDF

Inchange Semiconductor 2SC2827

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC2827
Datasheet 2SC2827 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC2827 datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min)
●Fast Switching Speed
●Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 3A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for use in high-voltage,high-speed,power switching applications such as switching regulators, inverters, solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 ICM Collector Current-Peak 6 IB Base Current-Continuous 2 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.125 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2827 ELECTRICAL CHARACTER...
2SC2827 page 2 preview