Datasheet4U Logo Datasheet4U.com

2SC2838 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2838.

General Description

· ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2838 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;

IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;