High Breakdown Voltage-
: V(BR)CBO= 500V(Min)
High Switching Speed
Low Collector Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high speed power switching applications.
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 500V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2841
isc website：www.iscsemi.
2SC2841 Datasheet
