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2SC2841 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : V(BR)CBO= 500V(Min) High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed power switching applications.

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Datasheet Details

Part number 2SC2841
Manufacturer INCHANGE
File Size 194.04 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 500V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2841 isc website：www.iscsemi.
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