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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 1.0(Max) @ IC= 0.25A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
0.
2SC2899 Datasheet
