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2SC2899 Datasheet PDF

Inchange Semiconductor 2SC2899

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC2899
Datasheet 2SC2899 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC2899 datasheet page 1 preview

DESCRIPTION

●Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.)
●Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 0.25A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 0.5 A ICM Collector Current-peak Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature 1.0 A 0.75 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2899 isc Website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELE...
2SC2899 page 2 preview