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2SC2902 Datasheet PDF

Inchange Semiconductor 2SC2902

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC2902
Datasheet 2SC2902 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC2902 datasheet page 1 preview

DESCRIPTION

●Excellent Safe Operating Area
●Low Collector-Emitter Saturation Voltage
●Complement to Type MJ2955
●Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

APPLICATIONS

●Designed for general-purpose switching and amplifier applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCER Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 150 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SC2902

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Vo...
2SC2902 page 2 preview