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2SC2902 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor isc Product Specification 2SC2902.

General Description

·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·plement to Type MJ2955 ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCER Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 150 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SC2902 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;

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