Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)
High Power Dissipation
Complement to Type 2SA1215
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min) ·High Power Dissipation ·Complement to Type 2SA1215 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2921
isc website：www.iscsemi.
2SC2921 Datasheet
