Datasheet Details
| Part number | 2SC2921 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.52 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2921-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2921 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.52 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2921-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·High Power Dissipation ·Complement to Type 2SA1215 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2921 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2921 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A ICBO Collector Cutoff Current VCB= 160V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2921 | Silicon NPN Transistor | Sanken electric |
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