Inchange Semiconductor 2SC2928
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2928 |
|---|---|
| Datasheet | 2SC2928 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high voltage, high speed and high power applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 80 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC=1mA; IB=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VB...