Datasheet Details
| Part number | 2SC2929 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2929_INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC2929.
| Part number | 2SC2929 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2929_INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2929 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2929 | POWER TRANSISTOR | Fuji |
| Part Number | Description |
|---|---|
| 2SC2920 | NPN Transistor |
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| 2SC2913 | NPN Transistor |
| 2SC2914 | NPN Transistor |
| 2SC2934 | NPN Transistor |
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| 2SC2944 | NPN Transistor |