Inchange Semiconductor 2SC2934
The 2SC2934 is suitable for low power switching regulator, DC-DC converter and high voltage switch. The information contained herein is presented only as a guide for the applications of our products.DESCRIPTION
●High breakdown voltage●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.2 A 12.5 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2934ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=50mA; IB= 5mA ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 50mA ; VCE= 10V MIN TYP. MAX UNIT 1.5 V 100 μA 100 μA 50 300 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.