Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
High Switching Speed
Low Collector Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Color and B/W TV power supply
Active power filter
Indust
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
2SC2944
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color and B/W TV power supply ·Active power filter ·Industrial use power supply ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
2SC2944 Datasheet
