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2SC2954 - Silicon NPN RF Transistor

Datasheet Summary

Description

NF = 2.3 dB TYP.

; ︱S21e︱2 = 20 dB TYP.

@ f = 200 MHz NF = 2.4 dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise wide band amplifier and buffer

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Datasheet Details

Part number 2SC2954
Manufacturer INCHANGE
File Size 182.88 KB
Description Silicon NPN RF Transistor
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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2954 DESCRIPTION ·Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.15 A 2 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.
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