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2SC2964 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor isc Product Specification 2SC2964.

General Description

·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

APPLICATIONS ·Switching regulator ·Motor controls ·Deflections circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 150 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SC2964 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;

IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A;

2SC2964 Distributor