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2SC2965 Datasheet PDF

Inchange Semiconductor 2SC2965

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC2965
Datasheet 2SC2965 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC2965 datasheet page 1 preview

DESCRIPTION

●Excellent Safe Operating Area
●Low Collector-Emitter Saturation Voltage
●Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

APPLICATIONS

●Switching regulator
●Motor controls
●Deflections circuits

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 150 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SC2965

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A...
2SC2965 page 2 preview