Datasheet Details
| Part number | 2SC2975 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.94 KB |
| Description | NPN Transistor |
| Download | 2SC2975 Download (PDF) |
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| Part number | 2SC2975 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.94 KB |
| Description | NPN Transistor |
| Download | 2SC2975 Download (PDF) |
|
|
|
·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 7 V 5 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2975 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2975.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2975 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC2929 | Silicon NPN Power Transistor |