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2SC2979 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 0.75A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,

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Datasheet Details

Part number 2SC2979
Manufacturer INCHANGE
File Size 190.00 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SC2979 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 0.75A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
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