Datasheet Details
| Part number | 2SC2979 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.00 KB |
| Description | NPN Transistor |
| Download | 2SC2979 Download (PDF) |
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| Part number | 2SC2979 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.00 KB |
| Description | NPN Transistor |
| Download | 2SC2979 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 0.75A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2979 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
isc Silicon NPN Power Transistor 2SC2979.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2979 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SC2979 | Silicon power Transistor | SavantIC |
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