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2SC3025 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character displ

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage power switching character display horizontal deflection output applications.