High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 850V(Min)
High Switching Speed
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulators
Motor controls
Ultrasonic generator
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isc Silicon NPN Power Transistor
2SC3060
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic generators ·Class C and D amplifiers ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
850
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
150
W
175
℃
Tstg
Storage Temperature Range
-65~175
℃
isc
2SC3060 Datasheet
