Inchange Semiconductor 2SC3130
Silicon NPN RF Transistor
| Part No. | 2SC3130 |
|---|---|
| Datasheet | 2SC3130 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current-Gain Bandwidth Product●Small Output Capacitance
APPLICATIONS
●Designed for high-frequency amplification, oscillation, mixing applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 15 V 10 V 3V 50 mA 0.15 W 150 ℃ -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3130ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 3 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA ICBO Collector Cutoff Current VCB= 10V; IE= 0 10 V 0.5 V 1 μA hFE DC Current Gain IC= 5mA ; VCE= 4V 75 400 fT Current-Gai...
