2SC3144 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 1.5A Wide Area of Safe Operation Complement to Type 2SA1258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

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Datasheet Details

Part number	2SC3144
Manufacturer	Inchange Semiconductor
File Size	192.64 KB
Description	NPN Transistor
Datasheet	2SC3144 Datasheet

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 1.5A ·Wide Area of Safe Operation ·Complement to Type 2SA1258 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.