Datasheet Details
| Part number | 2SC3180N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.34 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3180N-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3180N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.34 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3180N-INCHANGE.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1263N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3180N isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3180N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3180N | SILICON POWER TRANSISTOR | SavantIC |
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2SC3180 | SILICON POWER TRANSISTOR | SavantIC |
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2SC3180 | Silicon NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SC3180 | NPN Transistor |
| 2SC3181 | NPN Transistor |
| 2SC3182 | NPN Transistor |
| 2SC3184 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |
| 2SC3148 | NPN Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |