Inchange Semiconductor 2SC3181
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3181 |
|---|---|
| Datasheet | 2SC3181 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 6A●Good Linearity of hFE
●Complement to Type 2SA1264
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applications●Recommend for 55W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3181 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3181ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturatio...