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2SC3181 - NPN Transistor

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Description

Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 6A Good Linearity of hFE Complement to Type 2SA1264 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity

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Datasheet Details

Part number 2SC3181
Manufacturer INCHANGE
File Size 199.09 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1264 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3181 isc website：www.iscsemi.
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