Inchange Semiconductor 2SC3198
Silicon NPN Power Transistor
| Part No. | 2SC3198 |
|---|---|
| Datasheet | 2SC3198 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain-hFE=70-700@IC = 2mA●Excellent hFE Linearity
●Excellent Safe Operating Area
●Low Noise
●Complement to Type 2SA1266
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Low Frequency Amplifiers.●Low Noise Amplifiers.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range INCHANGE Semiconductor 2SC3198 VALUE UNIT 60 V 50 V 5V 150 mA 400 mW 125 ℃ -55~125 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor 2SC3198ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 10mA VBE(sat