Datasheet Details
| Part number | 2SC3214 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.09 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3214-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3214 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.09 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3214-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Large safe operating area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators,Motor controls,Ultrasonic Oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3214 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 10mA;
IB=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3214 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3210 | NPN Transistor |
| 2SC3211 | NPN Transistor |
| 2SC3212 | NPN Transistor |
| 2SC3223 | NPN Transistor |
| 2SC3229 | NPN Transistor |
| 2SC3231 | NPN Transistor |
| 2SC3235 | NPN Transistor |
| 2SC3250 | NPN Transistor |
| 2SC3253 | NPN Transistor |
| 2SC3254 | NPN Transistor |