2SC3214
DESCRIPTION
- High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
- High Switching Speed
- Large safe operating area
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for switching regulators,Motor controls,Ultrasonic
Oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-45~150 ℃
2SC3214 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
