Datasheet Details
| Part number | 2SC3229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.12 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3229-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3229.
| Part number | 2SC3229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.12 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3229-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, lighting inverter and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 20 mA 2 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3229 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3229 | SILICON POWER TRANSISTOR | SavantIC |
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