Datasheet Details
| Part number | 2SC3231 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3231-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3231.
| Part number | 2SC3231 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3231-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min) ·Large Current Capability ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3231 | SILICON POWER TRANSISTOR | SavantIC |
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