2SC3231
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min)
- Large Current Capability
- High Collector Power Dissipation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
Junction Temperature
2 W
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
