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2SC3253 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1289 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3253 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3253 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;

RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;

2SC3253 Distributor