Datasheet Details
| Part number | 2SC3272 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3272-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3272.
| Part number | 2SC3272 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3272-INCHANGE.pdf |
|
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV chroma output and video signal amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.1 A 5 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3272 | SILICON POWER TRANSISTOR | SavantIC |
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