Download 2SC3318 Datasheet PDF
Inchange Semiconductor
2SC3318
DESCRIPTION - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) - High Switching Speed - High Reliability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching regulators - Ultrasonic generators - High frequency inverters - General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage VEBO Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature...