Datasheet4U Logo Datasheet4U.com

2SC3336 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC3336 APPLICATIONS Designed for high voltage, high speed and high power switching applic

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3336 Silicon NPN Transistor Hitachi Semiconductor
2SC3336 SILICON POWER TRANSISTOR SavantIC
2SC3330 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SC3330 NPN Silicon Epitaxial Planar Transistor PACO
2SC3330 NPN Silicon Epitaxial Planar Transistor Bluecolour

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3300 NPN Transistor
2SC3306 NPN Transistor
2SC3307 NPN Transistor
2SC3309 NPN Transistor
2SC3310 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC3336 APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.