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2SC3346 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A High Speed Switching Time : tstg= 1.0μs Complement to Type 2SA1329 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications

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Datasheet Details

Part number 2SC3346
Manufacturer INCHANGE
File Size 195.85 KB
Description NPN Transistor
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isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A ·High Speed Switching Time : tstg= 1.0μs ·Complement to Type 2SA1329 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3346 isc website：www.iscsemi.
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