2SC3346
DESCRIPTION
- Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC=6A
- High Speed Switching Time
: tstg= 1.0μs
- plement to Type 2SA1329
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3346 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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