Datasheet Details
| Part number | 2SC3423 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3423-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3423 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3423-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Complement to Type 2SA1360 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3423 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3423 | Silicon NPN Transistor | Toshiba Semiconductor |
 |
2SC3423 | SILICON POWER TRANSISTOR | SavantIC |
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