Inchange Semiconductor 2SC3423
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3423 |
|---|---|
| Datasheet | 2SC3423 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min)●Complement to Type 2SA1360
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3423 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VBE(on) Base-Emitter On Voltage IC= 10mA; VCE= 5V ICBO...