Datasheet Details
| Part number | 2SC3450 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3450-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3450 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3450-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 90 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3450 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3450 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC3451 | NPN Transistor |
| 2SC3456 | NPN Transistor |
| 2SC3457 | NPN Transistor |
| 2SC3458 | NPN Transistor |
| 2SC3459 | Silicon NPN Power Transistor |
| 2SC3409 | NPN Transistor |
| 2SC3416 | NPN Transistor |
| 2SC3419 | NPN Transistor |
| 2SC3420 | NPN Transistor |
| 2SC3423 | NPN Transistor |