2SC3456 Datasheet PDF - INCHANGE NPN Transistor Specs

2SC3456 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : V(BR)CBO= 1100V(Min) Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

Datasheet Details

Part number	2SC3456
Manufacturer	INCHANGE
File Size	194.87 KB
Description	NPN Transistor
Datasheet	2SC3456 Datasheet
Additional preview pages of the 2SC3456 datasheet.

📁 Similar Datasheet

2SC3456 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

2SC3456 - SILICON POWER TRANSISTOR (SavantIC)

2SC3450 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

2SC3451 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

2SC3451 - SILICON POWER TRANSISTOR (SavantIC)

2SC3457 - NPN Silicon Transistor (Sanyo Semicon Device)

2SC3457 - SILICON POWER TRANSISTOR (SavantIC)

2SC3458 - NPN Triple Diffused Planar Type Silicon Transistor (Sanyo Semicon Device)

2SC3458 - SILICON POWER TRANSISTOR (SavantIC)

2SC3459 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3456 isc website：www.iscsemi.

Published: Sep 20, 2020 |