Inchange Semiconductor 2SC3475
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3475 |
|---|---|
| Datasheet | 2SC3475 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 2A●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High speed switching applications.●High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 20 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3475 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3475ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2...