Inchange Semiconductor 2SC3502
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3502 |
|---|---|
| Datasheet | 2SC3502 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V●Complement to Type 2SA1380
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for ultrahigh-definition CRT display, video out- put applicaitonsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dssipation Ta=25℃ PC Collector Power Dssipation TC=25℃ Ti Junction Temperature 0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3502 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3502ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vl...