Datasheet Details
| Part number | 2SC3540 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3540-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3540 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3540-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ·Complement to Type 2SA1388 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3540 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3540 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3540 | SILICON POWER TRANSISTOR | SavantIC |
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