Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 3A
Complement to Type 2SA1388
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PA
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 3A ·Complement to Type 2SA1388 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
1
A
25 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3540
isc website：www.iscsemi.
2SC3540 Datasheet
