Inchange Semiconductor 2SC3547
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3547 |
|---|---|
| Datasheet | 2SC3547 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current-Gain—Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for TV tuner, UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3547ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA h...