Inchange Semiconductor 2SC3547A
Silicon NPN RF Transistor
| Part No. | 2SC3547A |
|---|---|
| Datasheet | 2SC3547A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current-Gain—Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mAAPPLICATIONS
●Designed for TV tuner, UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 20 V 12 V 3V 30 mA 15 mA 0.15 W 125 ℃ -55~125 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3547AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 10V; IE= 0 VEB= 1V; IC= 0 0.1 μA 1.0 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 35 130 fT Current-Gain—Bandwidth Product COB Output Capacitance IC= 10mA ; VCE...
