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2SC3557 - NPN Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and genera

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Datasheet Details

Part number 2SC3557
Manufacturer INCHANGE
File Size 188.75 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SC3557 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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