Inchange Semiconductor 2SC3568
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.DESCRIPTION
●Low Collector Saturation Voltage●Fast Switching Speed
●Complement to Type 2SA1396
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulator, DC-DC converter and high frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3568 isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO VCEX(SUS)-1 VCEX(SUS)-2 VCE(sat) Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage C...