Datasheet Details
| Part number | 2SC3569 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3569-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3569.
| Part number | 2SC3569 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3569-INCHANGE.pdf |
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·Low Collector Saturation Voltage ·High switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Pulse 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3569 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A;
IB= 0.14A VBE(sat) Base-Emitter Saturation Voltage IC= 0.7A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3569 | SILICON POWER TRANSISTOR | SavantIC |
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