Datasheet Details
| Part number | 2SC3571 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3571-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3571.
| Part number | 2SC3571 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3571-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage IC= 3A ;
Compare 2SC3571 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3571 | NPN SILICON POWER TRANSISTOR | NEC |
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2SC3571 | SILICON POWER TRANSISTOR | SavantIC |
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