Inchange Semiconductor 2SC3571
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3571 |
|---|---|
| Datasheet | 2SC3571 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage : VCEO(SUS)= 400V(Min.)●Low Collector Saturation Voltage
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulator, DC-DC converter and high frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Coll...
