Datasheet Details
| Part number | 2SC3591 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.28 KB |
| Description | NPN Transistor |
| Download | 2SC3591 Download (PDF) |
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Overview: isc Silicon NPN Power Transistors 2SC3591.
| Part number | 2SC3591 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.28 KB |
| Description | NPN Transistor |
| Download | 2SC3591 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SC3591 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3591 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SC3591 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3505 | NPN Transistor |
| 2SC3506 | NPN Transistor |
| 2SC3507 | NPN Transistor |
| 2SC3518 | NPN Power Transistor |
| 2SC3519 | NPN Transistor |
| 2SC3519A | NPN Transistor |
| 2SC3527 | Silicon NPN Power Transistor |
| 2SC3528 | NPN Transistor |
| 2SC3540 | NPN Transistor |
| 2SC3549 | NPN Transistor |