Datasheet Details
| Part number | 2SC3621 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.13 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3621-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3621.
| Part number | 2SC3621 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.13 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3621-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage ·High breakdown voltage ·Complementary to 2SA1408 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vert.deflection output application ·Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation PC @ Tc=25℃ Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3621 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ;
IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;
IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3621 | NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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