Inchange Semiconductor 2SC3659
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3659 |
|---|---|
| Datasheet | 2SC3659 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCES= 1700V (Min)●Built-in Damper Didoe
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high voltage, high power switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3659 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3659ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.5 V ICBO Collector Cutoff Current VCE= 1400V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltag...