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2SC3709A - NPN Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A Good Linearity of hFE Complement to Type 2SA1451A APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V V

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isc Silicon NPN Power Transistor 2SC3709A DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1451A APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP＊ Pulse Collector Current 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ＊Tested in QT-2 transistor graphic instrument and test condition is IB=2A,VCE=5V. isc website：www.iscsemi.