Inchange Semiconductor 2SC3762
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3762 |
|---|---|
| Datasheet | 2SC3762 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 150V (Min)●High Switching Speed
●Wide Area of Safe Operation
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in high speed and power Switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 65 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3762ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cu...